XXIII ciclo INVESTIGATION OF Ge SURFACE DIFFUSION AND SiGe NANOSTRUCTURES BY SPECTRO - MICROSCOPY TECHNIQUES
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Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface
The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe, as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands a...
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Conventional surface probes are usually diffraction-based techniques, by which real-space surface structures are indirectly derived from their representations in the reciprocal space. While diffraction probes are very useful in determining the long-range order of a surface, they often suffer from ambiguities in atomic details. The advance of a new generation of surface probes based on force and...
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Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics-a 180 degrees rotation between two highly buckled configurations. At temperatures at which the mixed dimers di...
متن کاملLateral Ge Diffusion During Oxidation of Si/SiGe Fins.
This Letter reports on the unusual diffusion behavior of Ge during oxidation of a multilayer Si/SiGe fin. It is observed that oxidation surprisingly results in the formation of vertically stacked Si nanowires encapsulated in defect free epitaxial strained SixGe1-x. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) shows that extremely enhanced diffusion of Ge ...
متن کاملSurface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands.
Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The di...
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